A Chinese tech firm in Wuhan, Hubei province, has achieved a breakthrough in mass-producing silicon carbide (SiC) wafers at record speeds by using lasers instead of diamond wires. This marks a major technical advancement for electric vehicle makers working on faster charging systems.

SiC ingots, a third-generation semiconductor material, outperforms traditional silicon in high-voltage and high-temperature environments, making it a key component in next-generation electric vehicles that demand faster charging and longer range.